Converter (Three-Phase)

Controller-driven bidirectional AC/DC three-arm converter

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Libraries:
Simscape / Electrical / Semiconductors & Converters / Converters

Description

The Converter (Three-Phase) block models a six-pulse three-phase controlled converter that consists of three bridge arms. Each bridge arm comprises with two switching devices. The converter circuit connects a three-phase AC network to a DC network.

You can choose from two fidelity levels for the converter model. The equivalent model option does not model the individual switching devices but returns equivalent results. If you need detailed results for the switching device dynamics, use the detailed model option. Otherwise, use the equivalent model for faster simulation. To simulate in real time, use the equivalent model. To validate the results, use the detailed model with a variable-step solver. To use the detailed model, set the Fidelity level parameter to Detailed model - switching devices. To use the equivalent model, set the Fidelity level parameter to Equivalent model - PWM-controlled.

If you choose the detailed model, each component in the three-arm circuit is the same switching device, which you specify by setting the Switching device parameter. The switching devices that you can specify are implementations of blocks in the Simscape > Electrical > Semiconductors & Converters library:

• GTO — Gate turn-off thyristor. For information about the I-V characteristic of the device, see GTO.

• Ideal semiconductor switch — For information about the I-V characteristic of the device, see Ideal Semiconductor Switch.

• IGBT — Insulated-gate bipolar transistor. For information about the I-V characteristic of the device, see IGBT (Ideal, Switching).

• MOSFET — N-channel metal-oxide-semiconductor field-effect transistor. For information about the I-V characteristic of the device, see MOSFET (Ideal, Switching).

• Thyristor — For information about the I-V characteristic of the device, see Thyristor (Piecewise Linear).

• Averaged Switch — Semiconductor switch with an antiparallel diode. The control signal port G accepts values in the interval [0,1]. When G is equal to 0 or 1, the averaged switch is fully opened or fully closed respectively. The switch behaves similarly to the Ideal Semiconductor Switch block with an antiparallel diode. When G is between 0 and 1, the averaged switch is partly opened. You can average the pulse-width modulation (PWM) signal over a specified period. You can then undersample the model and use modulation waveforms instead of PWM signals.

This figure shows the equivalent circuit for a converter with fully controlled switching devices (e.g. IGBTs, GTOs).

This figure shows the equivalent circuit for a converter with partially controlled switching devices (e.g. thyristors).

Control the gate ports of the six switching devices via an input to port G on the Converter (Three-Phase) block:

1. Multiplex all six gate signals into a single vector with a Six-Pulse Gate Multiplexer block.

2. Connect the output of the Six-Pulse Gate Multiplexer block to the Converter (Three-Phase) block G port.

You can specify an integral protection diode for each switching device. An integral diode protects the semiconductor device by providing a conduction path for reverse current. An inductive load can produce a high reverse-voltage spike when the semiconductor device suddenly switches off the voltage supply to the load.

The table shows you how to set the Integral protection diode parameter based on your goals.

Goals		Value to Select	Integral Protection Diode
Do not include protection.		None	None
Include protection.	Prioritize simulation speed.	Diode with no dynamics	The Diode block
	Prioritize model fidelity by precisely specifying reverse-mode charge dynamics.	Diode with charge dynamics	The dynamic model of the Diode block

Note

If you set the Switching device parameter to Averaged Switch, the block automatically models protection diodes with no dynamics and the Integral protection diode parameter is not visible.

You can include a snubber circuit, consisting of a resistor and capacitor connected in series, for each switching device. Snubber circuits protect switching devices against high voltages that inductive loads produce when the device turns off the voltage supply to the load. Snubber circuits also prevent excessive rates of change of current when a switching device turns on.

To use the equivalent model as a rectifier, set all the elements of the PWM signal to zero. The model behaves as a three-phase diode rectifier.

Modeling Thermal Effects

Since R2024b

You can expose the thermal port to model the effects of generated heat and device temperature. To expose the thermal port:

• In the Main settings, set the Fidelity level parameter to Detailed model - switching devices.

• In the Switching Devices settings, set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• In the Switching Devices settings, select the Model thermal effects parameter.

For more information on using thermal ports and on the Thermal Port parameters, see Simulating Thermal Effects in Semiconductors.

When you expose the thermal port, the Converter (Three-Phase) block models conduction losses and the turn-on and turn-off losses of the switching devices. The Converter (Three-Phase) block uses the same methods to calculate these losses as these blocks with the On-state behavior and switching losses parameter set to Specify constant values:

• GTO

• IGBT (Ideal, Switching)

• MOSFET (Ideal, Switching)

• Thyristor (Piecewise Linear)

For more information about how the Converter (Three-Phase) block calculates these losses, see the documentation for one of these blocks, depending on the option you select for the Switching device parameter.

If you enable the thermal port and you set the Integral protection diode parameter to Diode with no dynamics, the block also models reverse recovery loss for the protection diodes. The block uses the same method to calculate these losses as the Diode block with the Fidelity level parameter set to Ideal switching and the Diode model parameter to Piecewise linear.

With ideal switching, the block does not use a physics-based charge model. The block represents the losses that the charge creates during reverse recovery as an instantaneous loss.

The block applies reverse recovery losses by stepping up the junction temperature with a value equal to the reverse recovery loss divided by the total thermal mass at the junction.

If you set the Reverse recovery loss model parameter to Tabulated loss, the value of the Reverse recovery loss table, Erec(Tj, If) parameter specifies the dissipated energy as a function of the junction temperature and the forward current just before the switching event. The off-state voltage linearly scales the losses relative to the Turn-off voltage when measuring recovery loss, Vrec parameter value. The table uses delayed values for the current and voltage. To use a value in the lookup table that is close to the instantaneous value, set the Filter time constant for voltage and current values parameter to a value that is lower than the fastest switching period.

If you set the Reverse recovery loss model parameter to Fixed loss, the value of the Reverse recovery loss parameter specifies the energy dissipated during each turn-off event. If you select the Scale reverse recovery loss with current and voltage parameter, then the block scales this loss value linearly by the on-state current and the off-state voltage. To use scaling values that are close to the instantaneous values, set Filter time constant for voltage and current values to a value that is lower than the fastest switching period.

Piecewise Constant Approximation in Averaged Switch for FPGA Deployment

If you set the Switching device parameter to Averaged switch and your model uses a partitioning solver, this block produces nonlinear partitions because the average mode equations include modes, G_sat that are functions of the input G. To make these equations compatible with hardware description language (HDL) code generation, and therefore FPGA deployment, set the Integer for piecewise constant approximation of gate input (0 for disabled) parameter to a value greater than 0. This block then treats the G_sat mode as a piecewise constant integer with a fixed range. This turns the previously nonlinear partitions to linear time varying partitions.

An integer value in the range [0,K], where K is the value of the Integer for piecewise constant approximation of gate input (0 for disabled), is now associated with each real value mode in the range [0,1]. The block computes the piecewise constant mode by dividing the original mode by K to normalize it back to the range [0,1]:

$$\begin{array}{l}{u}_I=\left(floor\left(u\cdot K\right)\right)\\ \widehat{u}=\frac{u_I}{K}\end{array}$$

Assumptions and Limitations

• If, in the Solver Configuration block inside your model, you set the Solver type parameter to Partitioning, the averaged switches introduce instability during dead time, when all gate inputs are set to 0. Where possible, use the open-zero state by setting all high-side switches to 0 and all low-side switches to 1.

• To use the Converter (Three-Phase) block as an active front end rectifier, if you set the Fidelity level parameter to Equivalent model - PWM-controlled or you set the Switching device parameter to Averaged Switch, you must add a mid-point ground system on the DC side. This figure shows how to build a mid-point ground system with either two resistors or two capacitors.

  

Examples

Asynchronous Machine Direct Torque Control

Control an asynchronous machine (ASM) using the direct-torque control method. A PI-based speed controller supplies the torque reference. The direct-torque controller generates the inverter pulses.

• Open Model

Three-Phase Grid-Connected Rectifier Control

Control the DC-link voltage using a grid-connected rectifier. The Rectifier control subsystem uses a PI-based cascade control structure. The Scopes subsystem contains scopes that allow you to see the simulation results. If you have a license for HDL Coder™, you can generate VHDL code for an FPGA using the Simscape™ HDL Workflow Advisor.

• Open Model

Three-Phase Grid-Tied Inverter

Control the voltage in a grid-tied inverter system. The Voltage regulator subsystem implements the PI-based control strategy. The three-phase inverter is connected to the grid via a Circuit Breaker. The Circuit Breaker is open at the beginning of the simulation to allow synchronization. At time 0.15 seconds, the Circuit breaker closes, and the inverter is connected to the grid. The Scopes subsystem contains scopes that allow you to see the simulation results. The inverter is implemented using IGBTs. To speed up simulation, or for real-time deployment, the IGBTs can be replaced with Averaged Switches. In this way the gate signals can be averaged over a specified period or replaced with modulation waveforms.

• Open Model

Three-Phase Inverter Voltage Control

Control the voltage in a three-phase inverter system. The inverter is implemented using IGBTs. To speed up simulation, or for real-time deployment, the IGBTs can be replaced with Averaged Switches. In this way the gate signals can be averaged over a specified period or replaced with modulation waveforms.

• Open Model

Ports

Conserving

G — Gate terminals

electrical

Vector input port associated with the gate terminals of the switching devices. Connect this port to a Six-Pulse Gate Multiplexer block.

~ — Three-phase port

electrical

Composite three-phase port.

For more information about composite and expanded three-phase ports, see Three-Phase Ports.

Dependencies

To enable this port, set Electrical connection to Composite three-phase ports.

a — a-phase

electrical

Electrical conserving port associated with the a-phase.

Dependencies

To enable this port, set Electrical connection to Expanded three-phase ports.

b — b-phase

electrical

Electrical conserving port associated with the b-phase.

Dependencies

To enable this port, set Electrical connection to Expanded three-phase ports.

c — c-phase

electrical

Electrical conserving port associated with the c-phase.

Dependencies

To enable this port, set Electrical connection to Expanded three-phase ports.

+ — Positive terminal

electrical

Electrical conserving port associated with the DC positive terminal.

- — Negative terminal

electrical

Electrical conserving port associated with the DC negative terminal.

H — Thermal port

thermal

Since R2024b

Thermal conserving port associated with the thermal mass of the switching devices.

Dependencies

To enable this port:

• In the Main settings, set the Fidelity level parameter to Detailed model - switching devices.

• In the Switching Devices settings, set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• In the Switching Devices settings, select the Model thermal effects parameter.

Parameters

Main

Electrical connection — Electrical connection

Composite three-phase ports (default) | Expanded three-phase ports

Option to have composite or expanded three-phase ports. For more information, see Three-Phase Ports.

Fidelity level — Fidelity level

Detailed model - switching devices (default) | Equivalent model - PWM-controlled

Since R2024a

Level of fidelity of the model.

To prioritize simulation accuracy or to obtain results for the individual switching devices, set this parameter to Detailed model - switching devices.

To prioritize simulation speed, set this parameter to Equivalent model - PWM-controlled.

Switching Devices: GTO

To enable these parameters, set Fidelity level to Detailed model - switching devices and Switching device to GTO.

Switching device — Switching device

Ideal Semiconductor Switch (default) | GTO | IGBT | MOSFET | Thyristor | Averaged Switch

Converter switching device.

Model thermal effects — Option to model thermal effects

Off (default) | On

Option to model thermal effects.

Gate trigger voltage, Vgt — Gate trigger voltage

1 V (default)

Gate-cathode voltage threshold. The device turns on when the gate-cathode voltage is above this value.

Gate turn-off voltage, Vgt_off — Gate turn-off voltage

-1 V (default)

Gate-cathode voltage threshold. The device turns off when the gate-cathode voltage is below this value.

Holding current — Holding current

1 A (default)

Current threshold. The device stays on when the current is above this value, even when the gate-cathode voltage falls below the gate trigger voltage.

Forward voltage, Vf — Forward voltage

0.8 V (default)

Minimum voltage required across the anode and cathode block ports for the gradient of the device i-v characteristic to be 1/R_on, where R_on is the value of On-state resistance.

On-state resistance — On-state resistance

0.001 Ohm (default)

Rate of change of voltage versus current above the forward voltage.

Off-state Conductance — Off-state conductance

1e-6 1/Ohm (default)

Anode-cathode conductance when the device is off. The value must be less than 1/R, where R is the value of On-state resistance.

Switching Devices: Ideal Semiconductor Switch

To enable these parameters, set Fidelity level to Detailed model - switching devices and Switching device to Ideal semiconductor switch.

Switching device — Switching device

Ideal Semiconductor Switch (default) | GTO | IGBT | MOSFET | Thyristor | Averaged Switch

Converter switching device.

Threshold voltage, Vth — Threshold voltage

6 V (default)

Gate-cathode voltage threshold. The device turns on when the gate-cathode voltage is above this value.

On-state resistance — On-state resistance

0.001 Ohm (default)

Anode-cathode resistance when the device is on.

Off-state Conductance — Off-state conductance

1e-6 1/Ohm (default)

Anode-cathode conductance when the device is off. The value must be less than 1/R, where R is the value of On-state resistance.

Switching Devices: IGBT

To enable these parameters, set Fidelity level to Detailed model - switching devices and Switching device to IGBT.

Switching device — Switching device

Ideal Semiconductor Switch (default) | GTO | IGBT | MOSFET | Thyristor | Averaged Switch

Converter switching device.

Model thermal effects — Option to model thermal effects

Off (default) | On

Option to model thermal effects.

Threshold voltage, Vth — Threshold voltage

6 V (default)

Gate-emitter voltage at which the device turns on.

Forward voltage, Vf — Forward voltage

0.8 V (default)

Minimum voltage required across the collector and emitter block ports for the gradient of the diode i-v characteristic to be 1/R_on, where R_on is the value of On-state resistance.

On-state resistance — On-state resistance

0.001 Ohm (default)

Collector-emitter resistance when the device is on.

Off-state Conductance — Off-state conductance

1e-6 1/Ohm (default)

Collector-emitter conductance when the device is off. The value must be less than 1/R, where R is the value of On-state resistance.

Switching Devices: MOSFET

To enable these parameters, set Fidelity level to Detailed model - switching devices and Switching device to MOSFET.

Switching device — Switching device

Ideal Semiconductor Switch (default) | GTO | IGBT | MOSFET | Thyristor | Averaged Switch

Converter switching device.

Model thermal effects — Option to model thermal effects

Off (default) | On

Option to model thermal effects.

Threshold voltage, Vth — Threshold voltage

6 V (default)

Gate-source voltage threshold. The device turns on when the gate-source voltage is above this value.

Drain-source on resistance, R_DS(on) — Drain-source on resistance

0.001 Ohm (default)

Drain-source resistance when the device is on.

Off-state Conductance — Off-state conductance

1e-6 1/Ohm (default)

Drain-source conductance when the device is off. The value must be less than 1/R, where R is the value of On-state resistance.

Switching Devices: Thyristor

To enable these parameters, set Fidelity level to Detailed model - switching devices and Switching device to Thyristor.

Switching device — Switching device

Ideal Semiconductor Switch (default) | GTO | IGBT | MOSFET | Thyristor | Averaged Switch

Converter switching device.

Model thermal effects — Option to model thermal effects

Off (default) | On

Option to model thermal effects.

Gate trigger voltage, Vgt — Gate trigger voltage

1 V (default)

Gate-cathode voltage threshold. The device turns on when the gate-cathode voltage is above this value.

Holding current — Holding current

1 A (default)

Current threshold. The device stays on when the current is above this value, even when the gate-cathode voltage falls below the gate trigger voltage.

Forward voltage, Vf — Forward voltage

0.8 V (default)

Forward voltage at which the device turns on.

On-state resistance — On-state resistance

0.001 Ohm (default)

Anode-cathode resistance when the device is on.

Off-state Conductance — Off-state conductance

1e-6 1/Ohm (default)

Anode-cathode conductance when the device is off. The value must be less than 1/R, where R is the value of On-state resistance.

Switching Devices: Averaged Switch

To enable these parameters, set Fidelity level to Detailed model - switching devices and Switching device to Averaged switch.

Switching device — Switching device

Ideal Semiconductor Switch (default) | GTO | IGBT | MOSFET | Thyristor | Averaged Switch

Converter switching device.

Integer for piecewise constant approximation of gate input (0 for disabled) — Integer mode for FPGA deployment

0 (default) | nonnegative scalar

Integer used to perform piecewise constant approximation of the gate input for FPGA deployment.

On-state resistance — On-state resistance

0.001 Ohm (default)

Anode-cathode resistance when the device is on.

Switching Losses

To enable these parameters:

• In the Main settings, set the Fidelity level parameter to Detailed model - switching devices.

• In the Switching Devices settings, set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• In the Switching Devices settings, select the Model thermal effects parameter.

Switch-on loss — Switch-on loss

22.86e-3 J (default) | positive scalar

Since R2024b

Energy dissipated during a single switch-on event.

Dependencies

To enable this parameter, set Switching Device to GTO, IGBT, MOSFET, or Thyristor.

Switch-off loss — Forced commutation switch-off loss

17.14e-3 J (default) | positive scalar

Since R2024b

Energy dissipated during a single switch-off event.

Dependencies

To enable this parameter, set Switching Device to GTO, IGBT, or MOSFET.

Natural commutation rectification loss — Natural commutation rectification loss

10e-3 J (default) | positive scalar

Since R2024b

Rectification loss applied at the point that the block switches off when the current falls below the Holding current parameter value. Specify this parameter using a scalar quantity.

Dependencies

To enable this parameter, set Switching Device to GTO or Thyristor.

Off-state voltage for switching loss data — Off-state voltage for losses data

300 V (default) | positive scalar

Since R2024b

The output voltage of the device during the off state. This is the blocking voltage at which the switch-on loss and switch-off loss data are defined.

Dependencies

To enable this parameter, set Switching Device to GTO, IGBT, MOSFET, or Thyristor.

On-state current for switching loss data — Output current

600 A (default) | positive scalar

Since R2024b

Output currents for which the switch-on loss, switch-off loss, and on-state voltage are defined. The first element must be zero. Specify this parameter using a scalar quantity.

Note

This parameter is measured at the point that the gate voltage falls below the Gate trigger voltage, Vgt. The turn-on pulse is longer than the time it takes the current to reach its maximum value.

Dependencies

To enable this parameter, set Switching Device to GTO, IGBT, MOSFET, or Thyristor.

Wait time before switch-on current measurement — Wait time before switch-on current measurement

0 s (default) | nonnegative scalar

Since R2024b

Time to wait before recording the on-state current.

Dependencies

To enable this parameter, set Switching Device to GTO or Thyristor.

Use last on-state current from previous cycle for turn-on loss — Option to use last on-state current from previous cycle for turn-on loss

Off (default) | On

Since R2024b

Option to use the last on-state current from previous cycle for turn-on loss.

Dependencies

To enable this parameter, set Switching Device to GTO, IGBT, or MOSFET.

Use last off-state current from previous cycle for turn-offloss — Option to use last off-state current from previous cycle for turn-off loss

Off (default) | On

Since R2024b

Option to use the last off-state current from previous cycle for turn-off loss.

Dependencies

To enable this parameter, set Switching Device to GTO, IGBT, or MOSFET.

Integral Diodes

To enable these parameters, set Fidelity level to Detailed model - switching devices.

Integral protection diode — Integral protection diode model

None (default) | Diode with no dynamics | Diode with charge dynamics

Integral protection diode for each switching device.

Forward voltage — Forward voltage

0.8 V (default)

Minimum voltage required across the + and - block ports for the gradient of the diode I-V characteristic to be 1/R_on, where R_on is the value of On resistance.

Dependencies

To enable this parameter, choose one of these options:

• Set Switching device to Averaged Switch.

• Set Integral protection diode to Diode with no dynamics or Diode with charge dynamics.

On resistance — On resistance

0.001 Ohm (default)

Rate of change of voltage versus current above the Forward voltage.

Dependencies

To enable this parameter, choose one of these options:

• Set Switching device to Averaged Switch.

• Set Integral protection diode to Diode with no dynamics or Diode with charge dynamics.

Off conductance — Off conductance

1e-5 1/Ohm (default)

Conductance of the reverse-biased diode.

Dependencies

To enable this parameter, choose one of these options:

• Set Switching device to Averaged Switch.

• Set Integral protection diode to Diode with no dynamics or Diode with charge dynamics.

Reverse recovery loss model — Model for reverse recovery loss

Fixed loss (default) | Tabulated loss

Since R2024b

Whether to model fixed or tabulated reverse recovery losses.

Dependencies

To enable this parameter:

• Set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• Select the Model thermal effects parameter parameter.

• Set Integral protection diode to Diode with no dynamics.

Reverse recovery loss — Reverse recovery loss

0 J (default) | nonnegative scalar

Since R2024b

Dissipated energy in each turn-off event, regardless of the state of the diode before or after the switching event.

Dependencies

To enable this parameter:

• Set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• Select the Model thermal effects parameter parameter.

• Set Integral protection diode to Diode with no dynamics.

• Set Reverse recovery loss model to Fixed loss.

Scale reverse recovery loss with current and voltage — Option to scale reverse recovery loss

On (default) | Off

Since R2024b

Option to scale reverse recovery loss with current and voltage.

Dependencies

To enable this parameter:

• Set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• Select the Model thermal effects parameter parameter.

• Set Integral protection diode to Diode with no dynamics.

• Set Reverse recovery loss model to Fixed loss.

Forward current when measuring recovery loss, Irec — Forward current when the block measures recovery loss

10 A (default) | positive scalar

Since R2024b

Forward current through the diode before the reverse recovery event that the block uses to measure recovery loss.

Dependencies

To enable this parameter:

• Set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• Select the Model thermal effects parameter parameter.

• Set Integral protection diode to Diode with no dynamics.

• Set Reverse recovery loss model to Fixed loss.

• Select the Scale reverse recovery loss with current and voltage parameter.

Turn-off voltage when measuring recovery loss, Vrec — Turn-off voltage when measuring recovery loss

10 V (default) | positive scalar

Since R2024b

Voltage across the diode after the reverse recovery event used to measure recovery loss.

Dependencies

To enable this parameter:

• Set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• Select the Model thermal effects parameter parameter.

• Set Integral protection diode to Diode with no dynamics.

• Choose from one of these options:

  • Set Reverse recovery loss model to Fixed loss and select the Scale reverse recovery loss with current and voltage parameter.

  • Set the Reverse recovery loss model parameter to Tabulated loss.

Filter time constant for voltage and current values — Filter time constant for voltage and current values

1 / 1000 / 100 s (default) | positive scalar

Since R2024b

Filter time constant for voltage and current values used to calculate reverse recovery loss. Set this parameter to a value that is lower than the fastest switching period.

Dependencies

To enable this parameter:

• Set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• Select the Model thermal effects parameter parameter.

• Set Integral protection diode to Diode with no dynamics.

• Choose from one of these options:

  • Set Reverse recovery loss model to Fixed loss and select the Scale reverse recovery loss with current and voltage parameter.

  • Set the Reverse recovery loss model parameter to Tabulated loss.

Reverse recovery loss table, Erec(Tj, If) — Reverse recovery loss

zeros(2, 3) J (default) | vector of nonnegative scalars

Since R2024b

Dissipated energy as a function of the forward current If just before the switching event, and final off-state voltage once the diode is in off state.

Dependencies

To enable this parameter:

• Set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• Select the Model thermal effects parameter parameter.

• Set Integral protection diode to Diode with no dynamics.

• Set the Reverse recovery loss model parameter to Tabulated loss.

Temperature vector for recovery loss table, Tj — Temperature vector for recovery loss table

[298.15, 398.15] K (default) | vector

Since R2024b

Temperature vector used to tabulate reverse recovery loss.

Dependencies

To enable this parameter:

• Set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• Select the Model thermal effects parameter parameter.

• Set Integral protection diode to Diode with no dynamics.

• Set the Reverse recovery loss model parameter to Tabulated loss.

Forward current vector for recovery loss table, If — Forward current vector for recovery loss table

[.1, 1, 10] A (default) | vector of nonnegative scalars

Since R2024b

Forward current vector used to tabulate reverse recovery loss.

Dependencies

To enable this parameter:

• Set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• Select the Model thermal effects parameter parameter.

• Set Integral protection diode to Diode with no dynamics.

• Set the Reverse recovery loss model parameter to Tabulated loss.

Junction capacitance — Junction capacitance

50e-9 F (default)

Diode junction capacitance.

Dependencies

To enable this parameter, set Integral protection diode to Diode with charge dynamics.

Peak reverse current, iRM — Peak reverse current

-235 A (default) | negative scalar

Peak reverse current measured by an external test circuit. This value must be less than zero. The default value is -235 A.

Dependencies

To enable this parameter, set Integral protection diode to Diode with charge dynamics.

Initial forward current when measuring iRM — Initial forward current when measuring iRM

300 A (default) | positive scalar

Initial forward current when measuring peak reverse current. This value must be greater than zero.

Dependencies

To enable this parameter, set Integral protection diode to Diode with charge dynamics.

Rate of change of current when measuring iRM — Rate of change of current when measuring iRM

-50A/μs (default) | negative scalar

Rate of change of current when measuring peak reverse current. This value must be less than zero.

Dependencies

To enable this parameter, set Integral protection diode to Diode with charge dynamics.

Reverse recovery time parameterization — Reverse recovery time parameterization

Specify reverse recovery time directly (default) | Specify stretch factor | Specify reverse recovery charge

Determines how you specify reverse recovery time in the block. The default value is Specify reverse recovery time directly.

If you select Specify stretch factor or Specify reverse recovery charge, you specify a value that the block uses to derive the reverse recovery time. For more information on these options, see How the Block Calculates TM and Tau.

Dependencies

To enable this parameter, set Integral protection diode to Diode with charge dynamics.

Reverse recovery time, trr — Reverse recovery time

15 μs (default)

Interval between the time when the current initially goes to zero (when the diode turns off) and the time when the current falls to less than 10% of the peak reverse current. The value of the Reverse recovery time, trr parameter must be greater than the value of the Peak reverse current, iRM parameter divided by the value of the Rate of change of current when measuring iRM parameter.

Dependencies

To enable this parameter, set Integral protection diode to Diode with charge dynamics and Reverse recovery time parameterization to Specify reverse recovery time directly.

Reverse recovery time stretch factor — Reverse recovery time stretch factor

3 (default)

Value that the block uses to calculate Reverse recovery time, trr. This value must be greater than 1. Specifying the stretch factor is an easier way to parameterize the reverse recovery time than specifying the reverse recovery charge. The larger the value of the stretch factor, the longer it takes for the reverse recovery current to dissipate.

Dependencies

To enable this parameter, set Integral protection diode to Diode with charge dynamics and Reverse recovery time parameterization to Specify stretch factor.

Reverse recovery charge, Qrr — Reverse recovery charge

1500 μAs (default)

Value that the block uses to calculate Reverse recovery time, trr. Use this parameter if the data sheet for your diode device specifies a value for the reverse recovery charge instead of a value for the reverse recovery time.

The reverse recovery charge is the total charge that continues to dissipate when the diode turns off. The value must be less than $$-\frac{i^2{}_{RM}}{2a},$$

where:

• i_RM is the value specified for Peak reverse current, iRM.

• a is the value specified for Rate of change of current when measuring iRM.

Dependencies

To enable this parameter, set Integral protection diode to Diode with charge dynamics and Reverse recovery time parameterization to Specify reverse recovery charge.

For more information on these parameters, see Diode.

Snubbers

To enable these parameters, set Fidelity level to Detailed model - switching devices and Switching device to one of these options:

• Ideal Semiconductor Switch

• GTO

• IGBT

• MOSFET

• Thyristor

Snubber — Snubber

None (default) | RC snubber

Snubber for each switching device.

Snubber resistance — Snubber resistance

0.1 Ohm (default)

Snubber resistance.

Dependencies

To enable this parameter, set Snubber to RC snubber.

Snubber capacitance — Snubber capacitance

1e-7 F (default)

Snubber capacitance.

Dependencies

To enable this parameter, set Snubber to RC snubber.

Thermal Port

To enable these parameters:

• In the Main settings, set the Fidelity level parameter to Detailed model - switching devices.

• In the Switching Devices settings, set the Switching device parameter to one of these options:

  • GTO

  • IGBT

  • MOSFET

  • Thyristor

• In the Switching Devices settings, select the Model thermal effects parameter.

Thermal network — Options for thermal network modeling

External (default) | Specify junction and case thermal parameters | Cauer model | Cauer model parameterized with Foster coefficients

Since R2024b

Options for modeling the thermal network of the block.

Thermal mass parameterization — Option to parameterize thermal mass

By thermal time constants (default) | By thermal mass

Since R2024b

Options to parameterize the thermal mass:

• By thermal time constants — Parameterize the thermal masses in terms of thermal time constants.

• By thermal mass — Specify the thermal mass values directly.

Dependencies

To enable this parameter, set Thermal network to Specify junction and case thermal parameters, Cauer model, or Cauer model parameterized with Foster coefficients.

Junction case and case-ambient (or case-heatsink) thermal resistances, [R_JC R_CA] — Junction case and case-ambient (or case-heatsink) thermal resistances

[.08, .5] K/W (default) | vector of positive values

Since R2024b

Row vector [ R_JC R_CA ] of two thermal resistance values, represented by two Conductive Heat Transfer blocks. The first value, R_JC, is the thermal resistance between the junction and the case. The second value, R_CA, is the thermal resistance between port H and the device case.

Dependencies

To enable this parameter, set Thermal network to Specify junction and case thermal parameters.

Junction and case thermal time constants, [t_J t_C] — Junction and case thermal time constants

[.001, .2] s (default) | vector of positive values

Since R2024b

Row vector [ t_J t_C ] of two thermal time constant values. The first value, t_J, is the junction time constant. The second value, t_C, is the case time constant.

Dependencies

To enable this parameter, set Thermal network to Specify junction and case thermal parameters and Thermal mass parameterization to By thermal time constants.

Junction and case thermal masses, [M_J M_C] — Junction and case thermal masses

[.01, .5] J/K (default) | vector of positive values

Since R2024b

Row vector [ M_J M_C ] of two thermal mass values. The first value, M_J, is the junction thermal mass. The second value, M_C, is the case thermal mass.

Dependencies

To enable this parameter, set Thermal network to Specify junction and case thermal parameters and Thermal mass parameterization to By thermal mass.

Junction and case initial temperatures, [T_J T_C] — Junction and case initial temperatures

[25, 25] degC (default) | vector of positive values

Since R2024b

Row vector [ T_J T_C ] of two temperature values. The first value, T_J, is the junction initial temperature. The second value, T_C, is the case initial temperature.

Dependencies

To enable this parameter, set Thermal network to Specify junction and case thermal parameters.

Thermal resistances, [R1 R2 … Rn] — Thermal resistances

[.08,.1,.5] K/W (default) | [.08,.14,.22,.16] K/W | vector of positive values

Since R2024b

Row vector of n thermal resistance values, represented by the Cauer elements used in the thermal network.

If you set Thermal network to Cauer model, the default value is [.08,.1,.5]. If you set Thermal network to Cauer model parameterized with Foster coefficients, the default value is [.08,.14,.22,.16].

Dependencies

To enable this parameter, set Thermal network to Cauer model or Cauer model parameterized with Foster coefficients.

Thermal masses, [M1 M2 … Mn] — Thermal masses

[.01,.1,.5] J/K (default) | [.001,.005,.05,.5] J/K | vector of positive values

Since R2024b

Row vector of n thermal mass values, where n is the number of Cauer elements used in the thermal network.

If you set Thermal network to Cauer model, the default value is [.01,.1,.5]. If you set Thermal network to Cauer model parameterized with Foster coefficients, the default value is [.001,.005,.05,.5].

Dependencies

To enable this parameter, set Thermal network to Cauer model or Cauer model parameterized with Foster coefficients and Thermal mass parameterization to By thermal mass.

Thermal masses initial temperatures, [T1 T2 … Tn] — Thermal masses initial temperatures

[25, 25, 25] degC (default) | vector of positive values

Since R2024b

Row vector of temperature values that corresponds to the temperature drop across each thermal capacity in the model.

Dependencies

To enable this parameter, set Thermal network to Cauer model.

Thermal time constants, [t1 t2 … tn] — Thermal time constants

[.001,.1,.2] s (default) | [7e-05, .0007, .01, .08] s | vector of positive values

Since R2024b

Row vector of n thermal time constant values, where n is the number of Cauer elements used in the thermal network. The length of this vector must match the length of Thermal resistances, [R1 R2 … Rn]. With this parameterization, the thermal masses are computed as Mi = ti/Ri, where Mi, ti and Ri are the thermal mass, thermal time, and thermal resistance for the i^th Cauer element (if you set Thermal network to Cauer model) or Foster element (if you set Thermal network to Cauer model parameterized with Foster coefficients).

If you set Thermal network to Cauer model, the default value is [.001,.1,.2]. If you set Thermal network to Cauer model parameterized with Foster coefficients, the default value is [7e-05, .0007, .01, .08].

Dependencies

To enable this parameter, set Thermal network to Cauer model or Cauer model parameterized with Foster coefficients and Thermal mass parameterization to By thermal time constants.

Initial node temperatures, [T1 T2 ... Tn] — Initial node temperatures

[25, 25, 25, 25] degC (default) | vector of positive values

Since R2024b

Row vector of absolute temperature values of each node starting from the junction.

Dependencies

To enable this parameter, set Thermal network to Cauer model parameterized with Foster coefficients.

Junction thermal mass — Thermal mass of junction

0.01 J/K (default) | positive scalar

Since R2024b

Thermal mass of the junction.

Dependencies

To enable this parameter, set Thermal network to External.

For more information about using thermal ports and the Thermal Port parameters, see Simulating Thermal Effects in Semiconductors.

Extended Capabilities

C/C++ Code Generation
Generate C and C++ code using Simulink® Coder™.

Version History

Introduced in R2013b

R2024b: Model thermal effects by exposing the thermal port

You can now expose the thermal port to model the effects of generated heat and device temperature. When you expose the thermal port, the Converter (Three-Phase) block models the conduction losses and the turn-on and turn-off losses of the switching devices. If you enable the thermal port and you set the Integral protection diode parameter to Diode with no dynamics, the block also models reverse recovery loss of the protection diodes.

R2024a: Increase simulation speed using an equivalent model

You can now choose from two fidelity levels for the converter model. The equivalent model option does not model the individual switching devices but returns equivalent results. If you need detailed results for the switching device dynamics, use the detailed model option. Otherwise, use the equivalent model for faster simulation. To simulate in real time, use the equivalent model. To validate the results, use the detailed model with a variable-step solver.

To use the detailed model, set the Fidelity level parameter to Detailed model - switching devices. To use the equivalent model, set the Fidelity level parameter to Equivalent model - PWM-controlled.

Before R2024a, you can use the detailed model only.

R2021b: Electrical connection ports update

From R2021b forward, to switch between composite and expanded ports, set the Electrical connection parameter to either Composite three-phase ports or Expanded three-phase ports.

As a result of these changes, inside a model saved in an earlier release, review the Electrical connection parameter of this block.