IGBT Characteristics

This example shows generation of the Ic versus Vce curve for an insulated gate bipolar transistor. Define the vector of gate-emitter voltages and minimum and maximum collector-emitter voltages by double-clicking the block labeled 'Define Conditions (Vge and Vce)'. Click on the hyperlink 'plot curves' in the model to run the simulations plot the simulation results.

This type of plot can be compared against a manufacturer datasheet to confirm a correct implementation of the transistor parameters.

Model

Simulation Results from Simscape Logging

The plot below shows the collector current vs collector-emitter voltage characteristics for a range of gate-emitter voltages.

Results from Real-Time Simulation

This example has been tested on a Speedgoat Performance real-time target machine with an Intel® 3.5 GHz i7 multi-core CPU. This model can run in real time with a step size of 50 microseconds.